It’s basically an interconnection defect analysis process that detects and verifies what went wrong inside the PCB. The cross-section or micro-section analysis is a destructive analysis that measures the quality of the manufactured board. RLC Resonant Frequency and Impedance Calculator.Bandwidth Rise Time and Critical Length Calculator.Transmission Line Reflection Calculator.Trace Width and Current Capacity Calculator.Qualcomm, TSMC, 2019 Symposia on VLSI Technology and Circuits (VLSI 2019).TSMC, 2017 IEEE International Solid- State Circuits Conference (ISSCC).Samsung, 2016 IEEE 62nd International Electron Devices Meeting (IEDM).IBM, GlobalFoundries, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).This list is incomplete you can help by expanding it. And a high performance version for desktop and server chips.ħLP 7HPC 7 nm Microprocessors Two versions of the process will be developed: a low power version for mobile applications. GlobalFoundries claims a 2.8 times density improvement compared to their 14nm process, and a performance improvement of 40% or a 55% reduction in power consumption. The 7nm process features SAQP for the FEOL, and double patterning for the BEOL. Bartlett noted that GF will switch to EUVL when it's ready. The company is planning on first tape-out in the 2nd half of 2018 with mass production to begin in 2019. Instead of EUV, the company will use multiple patterning 193i for their 7 nm node. On May 30 2017, GlobalFoundries Senior Vice President and head of CMOS Business Unit, Gregg Bartlett, announced their updated roadmap. Some early designs that started out with a 9T library continued to use it regardless.Ĥ0 nm (smallest pitch used with DP) 76 nm (smallest pitch used with SP) Note that the 7.5T and 9T are similar in power and performance. That library was eventually obsoleted in favor of a 64-nm CPP 7.5T library which is now used in mass production by various companies. Prior to full production ramp, TSMC originally had a 9T HP variant that relied on a 57-nm CPP. Those cells are 240 nm and 300 nm tall respectively. TSMC 7-nanometer (N7 and N7P are the same with this regard) comes in two variations - high density and high performance. Compared to N16, N7 has over twice the effective channel width.ĭifferent multi-Vt devices were developed for this process with a Vt range of around 200 mV. In the graph shown on the left, we plotted the effective width from TSMC 16 nanometer to the current 7-nanometer node. Keep in mind that overall, the CV/I device delay is still better because the intrinsic capacitance like the Cgate and Cov still scale with Ieff.Īnother way to visualize the effect of the width and height scaling is through the effective width. Continuing to scale the fin width gives you a narrower channel while increasing the height to maintain a good effective width is done in order to improve the short channel characteristics and subthreshold slope (i.e., improved Ieff / Ceff) but it also degrades the overall parasitics. Some of the area scaling and cost benefits were achieved through fin pitch/ height scaling. This has the effect of reducing the resistance in that area by 50%. Like Intel's 10 nm process, TSMC introduced cobalt fill at the trench contacts, replacing the tungsten contact. The transistor profile has been enhanced as well. With the availability of high-throughput EUV machines ready for mass production, TSMC introduced a third variant called N7+ which uses EUV.Įlements distribution of Apple's A12 SoC (MSS Corp). In early 2019 TSMC introduced the second version of its N7 process called N7P which provides additional performance enhancements. Although TSMC has released a 10-nanometer node the year prior, the company considered its 10 nm to be a short-lived node and was intended to serve as a learning node on its way to 7. TSMC considers its 7-nanometer node a full node shrink over its 16-nanometer. TSMC started mass production of its 7-nanometer N7 node in April 2018. Intel's 7 nm process known as Intel 4 is set to debut with Meteror Lake and go into production in 2023. Only three companies are currently planning or developing a 7-nanometer node: Intel, TSMC, and Samsung. In terms of raw cell-level density, the 7-nanometer node features silicon densities between 90-102 million transistors per square millimeter based on WikiChip's own analysis. This process was introduced just as EUV Lithography became ready for mass production, therefore some foundries utilized EUV while others didn't. Due to the small feature sizes, quad patterning had to be utilized for some layers. First introduced by the major foundries around the 2018-19 timeframe, the 7-nanometer process technology is characterized by its use of FinFET transistors with fin pitches in the 30s of nanometer and densest metal pitches in the upper 30s or low 50s of nanometers.
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